纪清清

代表性论文

1.     Yue Lu^#, Chenyu Li^#, Shenbo Yang, Mingxuan Yuan, Shuo Qiao, Qingqing Ji*. Dopant-Mediated Carrier Tunneling in Short-Channel Two-Dimensional Transistors. Mater. Chem. Front. 2024, 8, 3300-3307.

2.     Wenzhi Quan^#, Yue Lu^#, Qilong Wu, Yujin Cheng, Jingyi Hu, Zehui Zhang, Jialong Wang, Zhenzhu Li, Lili Wang, Qingqing Ji*, Yanfeng Zhang*. Substantial Energy Band Modulation of Semiconducting Hexagonal GaTe Quantum Wells by Layer Thickness and Mirror Twin Boundaries. ACS Nano 2024, 18, 20591-20599.

3.     Xiaofan Wei^#, Zihan Wang^#, Ziyu Wang^#, Yue Lu, Qingqing Ji*, Weimin Liu*. Unveiling Spatiotemporal Diffusion of Hot Carriers Influenced by Spatial Non-uniform Hot Phonon Bottleneck Effect in Monolayer MoS₂. Nano Lett. 2024, 24, 9269-9275.

4.     Yan Yang^#, Yuanyuan Qiu^#, Bin Hua^#, Jiliang Cai, Yile Zhang, Kecheng Cao, Xiaoqin Shen*, Qingqing Ji*. Large-Domain Monolayer MoS₂ Synthesis via Local-Feeding Metalorganic Chemical Vapor Deposition. ACS Mater. Lett. 2024, 6, 2802-2808.

5.     Mingxuan Yuan, Binbin Zhang, Jiliang Cai, Jiaqi Zhang, Yue Lu, Shuo Qiao, Kecheng Cao*, Hao Deng*, Qingqing Ji*. In-Plane Ferroelectrics Enabling Reduced Hysteresis in Monolayer MoS2 Transistors. Carbon Neutral. 2024, 3, 700-709.

6.     Shuo Qiao, Yuanyuan Qiu, Yue Lu, Zihan Wang, Mingxuan Yuan, Qingqing Ji*. One-Dimensional MoS₂Nanoscrolls as Miniaturized Memories. Nano Lett. 2024, 24, 4498-4504.

7.     Wenzhi Quan, Yue Lu, Qilong Wu, Chanjuan Shang, Chenyu Li, Jingyi Hu, Jialong Wang, Si Zhou, jijun Zhao, Qingqing Ji*, Yanfeng Zhang*. Spontaneous Line Defect-Induced Co₄Te₇ Superlattices on SrTO₃(001) Featuring Flat Bands. Adv. Funct. Mater. 2024, 34, 2315831.

8.     Fangfang Cui, Kun He, Shengqiang Wu, Hongmei Zhang, Yue Lu, Zhenzhu Li, Jingyi Hu, Shuangyuan Pan, Lijie Zhu, Yahuan Huan, Bo Li, Xidong Duan, Qingqing Ji*, Xiaoxu Zhao*, Yanfeng Zhang*. Stoichiometry-Tunable Synthesis and Magnetic Property Exploration of Two-dimensional Chromium Selenides. ACS Nano 2024, 18, 6276-6285.

9.     Xianyuan Jiang, Qilin Zhou, Yue Lu, Hao Liang, Qi Wei, Mengling Pan, Wenzhuo Li, Xin Wen, Xingzhi Wang, Wei Zhou, Danni Yu, Hao Wang, Ni Yin, Hao Chen, Hansheng Li, Ting Pan, Mingyu Ma, Gaoqi Liu, Wenjia Zhou, Zhenhuang Su, Qi Chen, Fengjia Fan, Fan Zheng, Xingyu Gao, Qingqing Ji*, Zhijun Ning*. Surface Heterojunction Based on n-Type Low Dimensional Perovskite Film for Highly Efficient Perovskite Tandem Solar Cells. Natl. Sci. Rev. 2024, 11, nwae055.

10.  Danni Yu, Mengling Pan, Gaoqi Liu, Xianyuan Jiang, Xin Wen, Wenzhuo Li, Shaojie Chen, Wenjia Zhou, Hao Wang, Yue Lu, Mingyu Ma, Zihao Zang, Peihong Cheng, Qingqing Ji, Fan Zheng, Zhijun Ning. Electron-Withdrawing Organic Ligand for High Efficiency All-Perovskite Tandem Solar Cells. Nat. Energy 2024, 9, 298-307.

11.  Zihan Wang^#, Yan Yang^#, Bin Hua, Qingqing Ji*. Synthetic Two-Dimensional Electronics for Transistor Scaling. Front. Phys. 2023, 18, 63601. (Invited review for a special issue on Two-dimensional Materials for Optoelectronics)

12.  Qingqing Ji, Cong Su, Nannan Mao, Xuezeng Tian, Juan-Carlos Idrobo, Jianwei Miao, William A. Tisdale, Alex Zettl, Ju Li, Jing Kong. Revealing the Brønsted-Evans-Polanyi Relation in Halide-Activated Fast MoS2 Growth Towards Millimeter-Sized 2D Crystals. Sci. Adv. 2021, 7, eabj3274.

13.  Kunyan Zhang^#, Yunfan Guo^#, Qingqing Ji^#, Ang-Yu Lu, Cong Su, Hua Wang, Alexander A. Puretzky, David Geohegan, Xiaofeng Qian, Shiang Fang, Efthimios Kaxiras, Jing Kong, Shengxi Huang. Enhancement of van der Waals Interlayer Coupling Through Polar Janus MoSSe. J. Am. Chem. Soc. 2020, 142, 17499-17507.

14.  Wei Sun Leong^#, Qingqing Ji^#*, Nannan Mao^#, Yimo Han, Haozhe Wang, Aaron J. Goodman, Antoine Vignon, Cong Su, Yunfan Guo, Pin-Chun Shen, Zhenfei Gao, David A. Muller, William A. Tisdale, Jing Kong*. Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides. J. Am. Chem. Soc. 2018, 140, 12354-12358.

15.  Qingqing Ji, Cong Li, Jingli Wang, Jingjing Niu, Yue Gong, Zhepeng Zhang, Qiyi Fang, Yu Zhang, Jianping Shi, Lei Liao, Xiaosong Wu, Lin Gu, Zhongfan Liu, Yanfeng Zhang. Metallic Vanadium Disulfide Nanosheets As a Platform Material for Multifunctional Electrode Applications. Nano Lett. 2017, 17, 4908-4916.

16.  Yu Zhang^#, Qingqing Ji^#, Jinxiu Wen, Jiu Li, Cong Li, Jianping Shi, Xiebo Zhou, Kebin Shi, Huanjun Chen, Yuanchang Li, Shaozhi Deng, Ningsheng Xu, Zhongfan Liu, Yanfeng Zhang. Monolayer MoS₂ Dendrites on a Symmetry-Disparate SrTiO3 (001) Substrate: Formation Mechanism and Interface Interaction. Adv. Funct. Mater. 2016, 26, 3299-3305.

17.  Qingqing Ji^#, Yu Zhang^#, Jianping Shi^#, Jingyu Sun, Yanfeng Zhang, Zhongfan Liu. Morphological Engineering of CVD-Grown Transition Metal Dichalcogenides for Efficient Electrochemical Hydrogen Evolution. Adv. Mater. 2016, 28, 6207-6212. (Inside Front Cover)

18.  Qingqing Ji, Yu Zhang, Yanfeng Zhang, Zhongfan Liu. Chemical Vapor Deposition of Group-VIB Metal Dichalcogenide Monolayers: Engineered Substrates from Amorphous to Single Crystalline. Chem. Soc. Rev. 2015, 44, 2587-2602. (Highly cited paper by Web of Science)

19.  Qingqing Ji, Min Kan, Yu Zhang, Yao Guo, Donglin Ma, Jianping Shi, Qiang Sun, Qing Chen, Yanfeng Zhang, Zhongfan Liu. Unravelling Orientation Distribution and Merging Behavior of Monolayer MoS₂ Domains on Sapphire. Nano Lett. 2015, 15, 198-205.

20.  Qingqing Ji, Yanfeng Zhang, Teng Gao, Yu Zhang, Donglin Ma, Mengxi Liu, Yubin Chen, Xiaofen Qiao, Ping-Heng Tan, Min Kan, Ji Feng, Qiang Sun, Zhongfan Liu. Epitaxial Monolayer MoS₂ on Mica with Novel Photoluminescence. Nano Lett. 2013, 13, 3870-3877. (Highly cited paper by Web of Science)

专利

1. 张艳锋, 张哲朋, 纪清清. 一种制备过渡金属硫属化合物纳米薄片的方法和二硫化钒、二硒化钒纳米薄片. 中国发明专利, CN107445204A, 2017-12-08.

2. 张艳锋，杨鹏飞，纪清清，李聪. 一种利用金属性过渡金属硫属化合物制备超级电容器电极的方法. 中国发明专利, CN107452516A, 2017-12-08.

3. Jing Kong, Qingqing Ji, Zhenfei Gao. In Situ Generation of Gaseous Precursors for Chemical Vapor Deposition of a Chalcogenide. US Patent App. 16/382,407, 2019.

4. 纪清清，杨衍，花斌. 一种硫化钼二维材料的制备方法. 中国发明专利，CN117144478A, 2023-12-01.

5. 纪清清，乔朔. 一种二硫化钼纳米卷及其制备方法和应用. 中国发明专利，CN117524845A, 2024-02-06.

6. 纪清清，裘元园，濮超丹，赵卓. 一种电荷存储器件及其制备方法. 中国发明专利，CN118099224A，2024-05-28.