寇煦丰，信息学院副教授，目前在学院担任后摩尔器件与集成系统研究中心主任。

寇煦丰2009年毕业于浙江大学信息学院（光电系）及竺可桢学院混合班，被授予竺可桢学院特优毕业生荣誉。后于2009年至2015年赴美国加州大学洛杉矶分校电子工程系深造，师从Raytheon讲座教授Kang L. Wang，获得微电子器件方向硕士及博士学位，并被授予UCLA电子工程系杰出博士毕业论文荣誉；之后于2016年2月加入上海科技大学信息科学与技术学院。寇煦丰博士至今共申请了发明专利9项，撰写了3部专著章节，发表了90余篇论文，并且大部分见于国际顶级学术期刊和会议，如Nature Electronics (2), Nature Materials (2), Nature Nanotechnology (2), Nature Communications (4), Science Advances (1), Phys. Rev. Lett. (3), Adv. Mater. (2), Nano Lett. (9), Proc. IEEE (1), IEEE-IEDM (1), IEEE-EDL (1), 总引用7000余次，H因子为36。此外，他还获得了2012年度美国高通公司Qualcomm Innovation fellowship奖学金，2013年度国家优秀自费留学生奖学金，上海科技大学2017、2020、2022年度优秀教师，2018年度上海市青年五四奖章，2020年中国科学院教育教学成果奖一等奖，2021年上海科技青年35人引领计划，2022年上海高等教育教学成果二等奖，2023年上海浦东首届科技精英，并于2016-2017连续两年评选为上海科技大学产业实践优秀导师，2017-2018连续两年当选为上海科技大学书院 “我最喜爱的导师” 。

目前寇煦丰博士主持和参与了包括上海市青年科技英才扬帆计划(2017-2020)，启明星计划(2021-2024)；科技部国家重点研发计划(3项，2017-2021, 2022-2025)，中国科学院战略性先导科技专项(2018-2024)，国家自然科学基金委员会重点培育计划(2022-2024)，面上项目(2019-2022)，国家重点实验室项目 (2022-2024，2022-2027)，以及Merck POC Program(2020-2021)在内的多项科研项目以及上海高校本科重点教改项目(2020)；课题组与清华大学、复旦大学、中国科学与技术大学、中科院微系统所/技物所/半导体所、Stanford University, UCLA, NIST, Oxford University, University of Tokyo等多个科研院所保持长期科研合作和学生交流；课题组学生多次荣获国家奖学金，上海市优秀毕业生等荣誉。

材料器件中心专硕招生专业：（085400，专业学位）电子信息

招生年度：2023年起

• 1. P. Cheng*, Q. Yao*,#, J.Q Xu, Q. Sun, A.J Grutter, P. Quarterman, P.P Balakrishnan, C.J Kinane, A.J Caruana, S. Langridge, A. Li, B. Achinuq, E. Heppell, Y.C Ji, S.S Liu, B.S Cui, J.M Liu, P.Y Huang, Z.K Liu, G.Q Yu, F.X Xiu, T. Hesjedal, J. Zou, X.D Han, H.J Zhang, Y.M Yang#, and X.F Kou#, Tailoring the Magnetic Exchange Interactions in Ferromagnet-Intercalated MnBi2Te4 Superlattices, Nature Electronics, 2023-01, 6, 18–27

• 2. X.Q Liu*, P.Y Huang*, Y.Y.Y Xia*, L. Gao, L.Y Liao, B.S Cui, D. Backes, G. van der Laan, T. Hesjedal, Y.C Ji, P. Chen, Y.F Zhang, F. Wu, M.X Wang, J.W Zhang, G.Q Yu, C. Song, Y.L Chen, Z.K Liu, Y.M Yang, Y. Peng, G. Li#, Q. Yao#, X.F Kou#, Wafer-scale epitaxial growth of the thickness-controllable van der Waals ferromagnet CrTe2 for reliable magnetic memory applications, Advanced Functional Materials, 2023-07,

• 3. J.L Luan*, Y. Feng*, Y.C Ji*, Y.Z Li, H.Z Li, Z.K Liu, C. Liu, J.S Zhang, X.F Kou#, and Y.Y Wang#, Controlling the zero Hall plateau in a quantum anomalous Hall insulator by in-plane magnetic field, Physical Review Letters, 2023-05, 130, 186201

• 4. L. Li*, Y.Y Wu*, X.Y Liu*, J.M Liu*, H.Z Ruan, Z.H Zhi, Y. Zhang, P.Y Huang, Y.C Ji, C.J Tang, Y.M Yang, R.C Che#, and X.F Kou#, Room Temperature Gate-Tunable Non-Reciprocal Charge Transport in Lattice-Matched InSb/CdTe Heterostructures, Advanced Materials, 2022-12, 2207322

• 5. Y.C Ji*, Z. Liu*, P. Zhang*, L. Li, S.F Qi, P. Chen, Y. Zhang, Q. Yao, Z.K Liu, K.L Wang, Z.H Qiao#, and X.F Kou#, Thickness-Driven Quantum Anomalous Hall Phase Transition in Magnetic Topological Insulator Thin Films, ACS Nano, 2022-01, 16, 1134-1141

• 6. X.Z Chen*, H. Bai*, Y.C Ji*, Y.J Zhou, L.Y Liao, Y.F You, W.X Zhu, Q. Wang, L. Han, X.Y Liu, A. Li, X.D Han, J. Yin, X.F Kou, F. Pan, and S. Cheng#, Control of Spin Current and Antiferromagnetic Moments via Topological Surface State, Nature Electronics, 2022-08, 9, 574-578

• 7. Z.D Tang*, Z.W Wang*, A. Guo, L.L Liu, C.W Cao, X. Luo, W.C Wu, Y.J Guo, Z.H Zhi, Y.Q Hu, Y.F Cao, G.B Shang, L.J Yu, S.J Hu, S.M Chen, Y.H Zhao, and X.F Kou#, Cryogenic CMOS RF Device Modeling for Scalable Quantum Computer Design, IEEE Journal of Electron Devices Society, 2022-05, 10, 532-539

• 8. Y.Q Hu*, Z.W Wang*, R.H Chen, Z.D Tang, A. Guo, C.W Cao, W.C Wu, S.M Chen, Y.H Zhao, L.J Yu, G.B Shang, H. Xu, S.J Hu, and X.F Kou#, Cryo-CMOS Model-Enabled 8-Bit Current Steering DAC Design for Quantum Computing, IEEE International Symposium on Circuits & Systems (ISCAS 2022), 2022-05,

• 9. L.Y Liao*, F.H Xue*, L. Han, J.Y Kim,, R.Q Zhang, L. Li, J.M Liu, X.F Kou#, C. Song#, F. Pan, and Y. Otani#, Efficient Orbital Torque in Polycrystalline Ferromagnetic-metal/Ru/Al2O3 Stacks, Physical Review B, 2022-03, 105, 104434

• 10. F.H Xue*, Y. Zhang*, Y. Zhang*, L.Y Liao*, L. Li, H.Z Ruan, L. Sun, J. Dong, C.J Tang, G.Q Yu, Y.M Yang#, and X.F Kou#, Narrow-Band Semiconductor Heterostructures for Efficient Spintronic Memory Device Applications, IEEE International Electron Devices Meeting (IEDM 2021), 2021-12, 32.5.1-32.5.4

• 11. Q. Yao, Y.C Ji, P. Cheng, Q.L He, and X.F Kou#, Topological insulators-based magnetic heterostructures (Invited Review), Advances in Physics:X, 2021-01, 6, 1870560

• 12. X.Y Liu, D. Wu, L.Y Liao, P. Chen, Y. Zhang, F.H Xue, Q. Yao, C. Song, K.L Wang, and X.F Kou#, Temperature Dependence of Spin-Orbit Torque-Driven Magnetization Switching in in-situ Growth Bi2Te3/MnTe Heterostructrures, Applied Physics Letters, 2021-03, 118, 112406

• 13. P. Chen*, Y. Zhang*, Q. Yao*, F.G Tian, L. Li, Z.K Qi, X.Y Liu, L.Y Liao, C. Song, J.Y Wang, J. Xia, G. Li, D.M. Burn, G. van der Laan, T. Hesjedal, S.L Zhang, and X.F Kou#, Tailoring hybrid anomalous Hall response in engineered magnetic Topological Insulator heterostructures, Nano Letters, 2020-02, 20, 1731-1737

• 14. Y. Zhang*, F.H Xue*, C.J Tang, J.M Li, L.Y Liao, L. Li, X.Y Liu, Y.M Yang, C. Song, and X.F Kou#, Highly Efficient Electric-Field Control of Giant Rashba Spin-Orbit Coupling in Lattice-Matched InSb/CdTe Heterostructures, ACS Nano, 2020-12, 14, 17396-17404

• 15. Z.W Wang*, Z.D Tang*, A. Guo, X. Luo, C.W Cao, Y.M Yuan, X.H Zhang, L.G Liu, J.L Li, Y.F Cao, Q.M Shao, S.J Hu#, S.M Chen, Y.H Zhao, and X.F. Kou#, Temperature-Driven Gate Geometry Effects in Nanoscale Cryogenic MOSFETs, IEEE Electron Device Letters, 2020-05, 5, 661-664

• 16. J.M Li*, C.J Tang*, P. Du, Y.L Jiang, Y. Zhang, X.Y Zhao, Q. Gong, and X.F Kou#, Epitaxial growth of lattice-matched InSb/CdTe heterostructures on the GaAs(111) substrate by Molecular Beam Epitaxy, Applied Physics Letters, 2020-03, 116, 122102

• 17. X.Y Liu, L.Y Liao, F.H Xue, L. Sun, Y.H Fan, W.J Jiang, S.L Zhang, C. Song, and X.F Kou#, Imaging magnetization switching induced by spin-orbit torque in perpendicularly magnetized Ta/CoFeB structure, IEEE Transaction on Magnetics, 2020-05, 5, 1400106

• 18. L. Pan*, X.Y Liu*, Q.L He*, A. Stern, G. Yin, X.Y Che, Q.M Shao, P. Zhang, P. Deng, C.Y Yang, B. Casas, E.S Choi, J. Xia, X.F Kou, and K.L Wang#, Probing the low temperature limit of the quantum anomalous Hall effect, Science Advances, 2020-06, 6:eaaz3595

• 19. W. Xia*, X.B Shi*, Y. Zhang*, H. Su, Q. Wang, L.C Ding, L.M Chen, X. Wang, Z.Q Zou, N. Yu, L. Pi, Y.F Hao, B. Li, Z.W Zhu, W.W Zhao#, X.F Kou#, Y. F Guo#, Bulk Fermi surface of the layered superconductor TaSe3 with three-dimensional strong topological insulator state, Physical Review B, 2020-04, 101, 155117

• 20. Y. Zhang*, C. Zhang*, H.X Gao, Y.W Liu, X.Y Liu, F.X Xiu#, and X.F Kou#, Large Hall angle-driven magneto-transport phenomena in topological Dirac semimetal Cd3As2, Applied Physics Letters, 2018-08, 113, 072104

• 21. Q.L He*#, Xufeng Kou*, A.J. Grutter*, G. Yin*, L. Pan, X.Y Che, Y.X Liu, T.X Nie, B. Zhang, S.M Disseler, B.J Kirby, W. Ratcliff-II, Q.M Shao, K. Murata, X.D Zhu, G.Q Yu, Y.B Fan, M. Montazeri, X.D Han, J.A Borchers, and K.L Wang#, Tailoring exchange couplings in magnetic topological insulator/antiferromagnet heterostructures, Nature Materials, 2017-01, 16, 94-100

• 22. K.L Wang, X.F Kou, P. Upadhyaya, Y.B Fan, Q.M Shao, G.Q Yu, and P.K Amiri#, Electric-Field Control of Spin-Orbit Interaction for Low-Power Spintronics (Invited Reivew), Proceedings of the IEEE, 2016-09, 104, 1974-2008

• 23. Y.B Fan*#, X.F Kou*, P. Upadhyaya*, Q.M Shao, L. Pan, M.R Lang, X.Y Che, J.S Tang, M. Montazeri, K. Murata, L.T Chang, M. Akyol, G.Q Yu, T.X Nie, K.L Wong, L. Liu, Y. Wang, Y. Tserkovnyak, and K.L Wang#, Electric-field control of spin-orbit torque in a magnetically doped topological insulator, Nature Nanotechnology, 2016-01, 11, 352-359

• 24. X.F Kou*, L. Pan*, J. Wang, Y.B Fan, E.S Choi, W.L Lee, T.X Nie, K. Murata, Q.M Shao, S.C Zhang, and K.L Wang#, Metal-to-Insulator Switching in Quantum Anomalous Hall states, Nature Communications, 2015-10, 6, 8474

• 25. X.F Kou, Y.B Fan, M.R Lang, P. Upadhyaya, and K.L Wang#, Magnetic Topological Insulators and Quantum Anomalous Hall Effect (Invited Review), Solid State Communications , 2015-07, 215-216, 34-53

• 26. X.F Kou*, S.T Guo*, Y.B Fan*, L. Pan, M.R Lang, Y. Jiang, Q.M Shao, T.X Nie, K. Murata, J.S Tang, Y. Wang, L. He, T.K Lee, W.L Lee#, and K.L Wang#, Scale-Invariant Quantum Anomalous Hall Effect in Magnetic Topological Insulators beyond Two-Dimensional Limit, Physical Review Letters, 2014-09, 113, 137201

• 27. Y.B Fan*#, P. Upadhyaya*, X.F Kou*, M.R Lang, S. Takei, Z.X Wang, J.S Tang, L. He#, L.T Chang, M. Montazeri, G.Q Yu, W.J Jiang, T.X Nie, R.N Schwartz, Y. Tserkovnyak, and Kang L Wang#, Magnetization switching through giant spin-orbit torque in a magnetically doped topological insulator heterostructures, Nature Materials, 2014-04, 13, 699–704

• 28. X.F Kou*, L. He*#, M.R Lang*, Y.B Fan, K.L Wong, Y. Jiang, T.X Nie, W.J Jiang, P. Upadhyaya, Z.K Xing, Y. Wang, F.X Xiu, R.N Schwartz and K.L Wang#, Manipulating Surface-Related Ferromagnetism in Modulation-Doped Topological Insulators, Nano Letters, 2013-09, 13, 4587-4593

• 29. X.F Kou, M.R Lang, Y.B Fan, Y. Jiang, T.X Nie, J.M Zhang, W.J Jiang, Y. Wang, Y.G Yao, L. He#, and K.L Wang#, Interplay between Different Magnetisms in Cr-Doped Topological Insulators, ACS Nano, 2013-09, 7, 9205-9212

• 30. X.F Kou, W.J Jiang, M.R Lang, F.X Xiu, L. He#, Y. Wang, X.X Yu, A.V Fedorov, P. Zhang, and K.L Wang#, Magnetically doped semiconducting topological insulators, Journal of Applied Physics, 2012-09, 112, 063912

• 31. X.F Kou*, L. He*#, F.X Xiu, M.R Lang, Z.M Liao, Y. Wang, A.V Fedorov, X.X Yu, J.S Tang, G. Huang, X.W Jiang, J.F Zhu, J. Zou, and K.L Wang#, Epitaxial growth of high mobility of Bi2Se3 thin film on CdS, Applied Physics Letters, 2011-06, 98, 242102